| PART |
Description |
Maker |
| M27W400 M27W400-100B6TR M27W400-100F6TR M27W400-10 |
4 Mbit (512Kb x8 or 256Kb x16), Low Voltage UV EPROM and OTP EPROM
512K X 8 UVPROM, 100 ns, CDIP40
4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM 4兆位512KB的x856Kb的x16低压紫外线可擦写可编程只读存储器和OTP存储
256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M27V400 M27V400-100B1TR M27V400-100B6TR M27V400-10 |
NND - 4 MBIT (512KB X8 OR 256KB X16) UV EPROM AND OTP EPROM
4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM 4兆位512KB的x856Kb的x16紫外线存储器和OTP存储
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
意法半导
ST Microelectronics
|
| M27W202 M27W202-100B6TR M27W202-100F6TR M27W202-10 |
2 Mbit 128Kb x16 Low Voltage UV EPROM and OTP EPROM 2兆位128KB的x16低压紫外线可擦写可编程只读存储器和OTP存储
3-Line To 8-Line Decoders/Demultiplexers 16-SOIC 0 to 70
Triple 3-Input Positive-AND Gates 14-SO 0 to 70
2 Mbit 256Kb x 8 Low Voltage UV EPROM and OTP EPROM
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M27W101 M27W101-100B6TR M27W101-100F6TR M27W101-10 |
1 Mbit 128Kb x8 Low Voltage UV EPROM and OTP EPROM 1兆位28KB x8低压紫外线EPROM和检察官办公室存储器
1 Mbit 128Kb x8 Low Voltage UV EPROM and OTP EPROM 1兆位128KB x8低压紫外线EPROM和检察官办公室存储器
Hex Drivers 14-SOIC 0 to 70 1兆位28KB x8低压紫外线EPROM和检察官办公室存储器
64 Mbit 4Mb x16 3V Supply FlexibleROM Memory
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M27C4001-35F1TR M27C4001-35F1X M27C4001-35F6TR M27 |
4 MBIT (512KB X8) UV EPROM AND OTP ROM
CAP 1000PF 50V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR MARKED
CAP 0.01UF 25V 1% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 0.01UF 25V 10% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 1000PF 100V 10% NP0(C0G) SMD-1206 TR-13-PL SN-NIBAR
CAP 1000PF 100V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR MARKED
CAP 0.01UF 25V 20% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 12PF 100V 10% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 120PF 100V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 1300PF 50V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 1000PF 100V 10% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 12PF 50V 10% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
LED Lamp; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No
4 Mbit 512Kb x 8 UV EPROM and OTP EPROM 4兆位× 8紫外12KB的存储器和OTP存储
SERVSWITCH USB COAX CPU CABLES, WITH AUDIO 20FT 4兆位× 8紫外12KB的存储器和OTP存储
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| M27V101 M27V101-100B1TR M27V101-100B6TR M27V101-10 |
1-Bit to 2-Bit Address Driver With 3-State Outputs 80-TSSOP -40 to 85
1 Mbit 128Kb x 8 Low Voltage UV EPROM and OTP EPROM 1兆位28KB × 8低压紫外线可擦写可编程只读存储器和OTP存储
2.5-V/3.3-V 16-Bit Buffers/Drivers With 3-State Outputs 48-SSOP -40 to 85 1兆位28KB × 8低压紫外线可擦写可编程只读存储器和OTP存储
1 Mbit 128Kb x 8 Low Voltage UV EPROM and OTP EPROM 1兆位128KB × 8低压紫外线可擦写可编程只读存储器和OTP存储
2.5-V/3.3-V 16-Bit Buffers/Drivers With 3-State Outputs 48-TVSOP -40 to 85
1 Mbit (128Kb x 8) Low Voltage UV EPROM and OTP EPROM
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M36W0R6030B0ZAQ M36W0R6030T0 M36W0R6030T0ZAQ M36W0 |
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package
|
ST Microelectronics
|
| M27V102 |
NND - 1 MBIT (64KB X16) LOW VOLTAGE UV EPROM AND OTP EPROM
|
SGS Thomson Microelectronics
|
| M27V160-100K1 |
16 MBIT (2MB X8 OR 1MB X16) LOW VOLTAGE UV EPROM AND OTP EPROM
|
ST Microelectronics
|
| M27W801 |
8 MBIT (1MB X8) LOW VOLTAGE UV EPROM AND OTP EPROM
|
ST Microelectronics
|
| M27C1001-35FTR M27C1001-45FTR M27C100106 M27C1001- |
1 Mbit (128 Kbit x 8) UV EPROM and OTP EPROM
|
STMICROELECTRONICS[STMicroelectronics]
|
